DSpace at KIST: Electromigration characteristics of Al/W-N/LOW-k/Si submicron interconnect structure

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DC Field	Value	Language
dc.contributor.author	Kim, Yong Tae	-
dc.contributor.author	yun Sang Sim	-
dc.contributor.author	Kim, Seong Il	-
dc.date.accessioned	2024-01-13T11:00:43Z	-
dc.date.available	2024-01-13T11:00:43Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/105935	-
dc.language	English	-
dc.title	Electromigration characteristics of Al/W-N/LOW-k/Si submicron interconnect structure	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	203rd Meeting of the Electrochemical Society, pp.no.718	-
dc.citation.title	203rd Meeting of the Electrochemical Society	-
dc.citation.startPage	no.718	-
dc.citation.endPage	no.718	-
dc.citation.conferencePlace	FR	-

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