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dc.contributor.authorSONG, JIN-DONG-
dc.contributor.author박영민-
dc.contributor.authorShin, Jae Cheol-
dc.contributor.authorDU-CHANG HEO-
dc.contributor.author배형철-
dc.contributor.author임재구-
dc.contributor.authorPark, Young Ju-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorCho, Woon Jo-
dc.contributor.authorLee, Jung Il-
dc.contributor.author김형석-
dc.contributor.author박찬경-
dc.date.accessioned2024-01-13T11:00:45Z-
dc.date.available2024-01-13T11:00:45Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105937-
dc.languageEnglish-
dc.subjectInAs-
dc.subjectquantum dots-
dc.subjectatomic layer epitaxy-
dc.subjectlaser diodes-
dc.titleStructural optical properties of InAs/GaAs quantum dots grown by atomic layer MBE and its application to 1.13 um laser diodes-
dc.title.alternative원자층 성장기법으로 제작된 InAs/GaAs 양자점의 구조적ㆍ광학적 특성과 1.13 um 레이저 다이오드에의 응용-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제10회 광전자 및 광통신 학술회의, v.10, pp.511 - 512-
dc.citation.title제10회 광전자 및 광통신 학술회의-
dc.citation.volume10-
dc.citation.startPage511-
dc.citation.endPage512-
dc.citation.conferencePlaceKO-
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