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dc.contributor.authorYoung Min Park-
dc.contributor.authorPark, Young Ju-
dc.contributor.authorKwang Moo Kim-
dc.contributor.authorShin, Jae Cheol-
dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorLee, Jung Il-
dc.contributor.authorKeon-Ho Yoo-
dc.date.accessioned2024-01-13T11:00:49Z-
dc.date.available2024-01-13T11:00:49Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105943-
dc.languageEnglish-
dc.subjectInAs/GaAs 양자점-
dc.subjectC-V-
dc.subjectphotoluminescence-
dc.subjectatomic layer epitaxy-
dc.titleElectrical and optical characterizations of InGaAs quantum dots grown by atomic layer epitaxy technique-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 10th Korean Conference on Semiconductors, pp.749 - 750-
dc.citation.titleThe 10th Korean Conference on Semiconductors-
dc.citation.startPage749-
dc.citation.endPage750-
dc.citation.conferencePlaceKO-
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