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dc.contributor.authorSONG, JIN-DONG-
dc.contributor.authorYoung Min Park-
dc.contributor.authorJae Gu Lim-
dc.contributor.authorShin, Jae Cheol-
dc.contributor.authorPark, Young Ju-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorHan, Il Ki-
dc.contributor.authorCho, Woon Jo-
dc.contributor.authorLee, Jung Il-
dc.date.accessioned2024-01-13T11:01:39Z-
dc.date.available2024-01-13T11:01:39Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105998-
dc.languageEnglish-
dc.subjectCompound semiconductor-
dc.subjectSelf-assembled quantum dots-
dc.subjectPhotoluminescence-
dc.subjectStrain relaxation layer-
dc.titleEffect of InxGa1-xAs strain relaxation layers on optical and structural properties of InAs/GaAs quantum dots for the application to optical communication-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe First International Symposium on Future Issues in Nano-optoelectronics, pp.95 - 98-
dc.citation.titleThe First International Symposium on Future Issues in Nano-optoelectronics-
dc.citation.startPage95-
dc.citation.endPage98-
dc.citation.conferencePlaceKO-
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