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dc.contributor.authorUk Hyun Lee-
dc.contributor.authorYong Hoon Kang-
dc.contributor.authorJoon Ho Oum-
dc.contributor.authorSongcheol Hong-
dc.contributor.authorSang-Jun Lee-
dc.contributor.authorSam Kyu Noh-
dc.contributor.authorMoondok Kim-
dc.contributor.authorYu Dong Jang-
dc.contributor.authorDonghan Lee-
dc.contributor.authorLee, Jung Il-
dc.date.accessioned2024-01-13T11:01:40Z-
dc.date.available2024-01-13T11:01:40Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/105999-
dc.languageEnglish-
dc.subjectQuantum dot infrared photodetector-
dc.subjectDoping density-
dc.subjectResponsivity-
dc.subjectDetectivity-
dc.titleDoping density and operation voltage in qauntum dot IR photodetector-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe First International Symposium on Future Issues in Nano-optoelectronics, pp.93 - 94-
dc.citation.titleThe First International Symposium on Future Issues in Nano-optoelectronics-
dc.citation.startPage93-
dc.citation.endPage94-
dc.citation.conferencePlaceKO-
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