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dc.contributor.authorChoi, Won Jun-
dc.contributor.authorH. T Yi-
dc.contributor.authorWoo, Deok Ha-
dc.contributor.authorLee, Jung Il-
dc.date.accessioned2024-01-13T11:01:41Z-
dc.date.available2024-01-13T11:01:41Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106000-
dc.languageEnglish-
dc.subjectquantum well-
dc.subjectintermixing-
dc.subjectflow rate-
dc.subjectcapping layer-
dc.subjectimpurity free impurity free-
dc.titleDependence of the intermixing of InGaAs/InGaAsP quantum well on NH₃ flow rate for the growth of SiNx capping layer-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe First International Symposium on Future Issues in Nano-optoelectronics, pp.74 - 78-
dc.citation.titleThe First International Symposium on Future Issues in Nano-optoelectronics-
dc.citation.startPage74-
dc.citation.endPage78-
dc.citation.conferencePlaceKO-
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