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dc.contributor.authorSONG JIN-DONG-
dc.contributor.authorY. M. Park-
dc.contributor.authorJ. G. Lim-
dc.contributor.authorShin Jae Cheol-
dc.contributor.authorPark Young Ju-
dc.contributor.authorChoi Won Jun-
dc.contributor.authorHan Il Ki-
dc.contributor.authorCho Woon Jo-
dc.contributor.authorLee Jung Il-
dc.date.accessioned2024-01-13T11:03:29Z-
dc.date.available2024-01-13T11:03:29Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106115-
dc.languageEnglish-
dc.subjectInAs-
dc.titleRole of InxGa1-xAs strain relaxation layers in optical and structural properties of InAs/GaAs quantum dots-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProceeding of SPIE Annual Meeting 2003, v.5224-
dc.citation.titleProceeding of SPIE Annual Meeting 2003-
dc.citation.volume5224-
dc.citation.conferencePlaceUS-
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