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dc.contributor.authorSUH, SANG HEE-
dc.contributor.authorKIM JIN SANG-
dc.contributor.author서대원-
dc.contributor.authorS-R Hahn-
dc.contributor.authorS. Sivananthan-
dc.date.accessioned2024-01-13T12:01:18Z-
dc.date.available2024-01-13T12:01:18Z-
dc.date.created2021-09-29-
dc.identifier.issn0277-786X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106506-
dc.languageEnglish-
dc.subjectHgCdTe-
dc.subjectinfrared detector-
dc.subjectMOVPE-
dc.subjectCdTe/Si substrates-
dc.titleCharacteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProceedings of SPIE, v.4795, pp.1 - 7-
dc.citation.titleProceedings of SPIE-
dc.citation.volume4795-
dc.citation.startPage1-
dc.citation.endPage7-
dc.citation.conferencePlaceUS-
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