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dc.contributor.authorJ.H. Lee-
dc.contributor.authorChoi Won Jun-
dc.contributor.authorPark Young Ju-
dc.contributor.authorHan Il Ki-
dc.contributor.authorLee Jung Il-
dc.contributor.authorCho Woon Jo-
dc.contributor.authorE.K. Kim-
dc.contributor.authorC.M. Lee-
dc.contributor.authorH.-W. Kim-
dc.date.accessioned2024-01-13T12:04:19Z-
dc.date.available2024-01-13T12:04:19Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106700-
dc.languageEnglish-
dc.titleThermal treatment of InGaAs/GaAs self-assembled quantum dots with SiNx and SiO ₂ capping layers-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 11th Seoul International Symposium on the Physics of Semiconductors and Applications, pp.235-
dc.citation.titleThe 11th Seoul International Symposium on the Physics of Semiconductors and Applications-
dc.citation.startPage235-
dc.citation.endPage235-
dc.citation.conferencePlaceKO-
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