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dc.contributor.author최훈상-
dc.contributor.author임건식-
dc.contributor.author이종한-
dc.contributor.authorKim Yong Tae-
dc.contributor.authorKim Seong Il-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T12:30:43Z-
dc.date.available2024-01-13T12:30:43Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106735-
dc.languageEnglish-
dc.subject결정구조-
dc.subjectSBN/ZrO2 강유전체게이트 구조-
dc.subject전기적특성-
dc.subjectinterdiffusion-
dc.titleCrystal structure and electrical properties Pt/SrBi2Nb2O9/ZrO2/Si ferroelectric gate structure-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation11th Seoul International Symposium on Physics of Semiconductors and Applications 2002 (ISPSA 2002), pp.331 - 332-
dc.citation.title11th Seoul International Symposium on Physics of Semiconductors and Applications 2002 (ISPSA 2002)-
dc.citation.startPage331-
dc.citation.endPage332-
dc.citation.conferencePlaceKO-
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