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dc.contributor.author고태곤-
dc.contributor.authorKIM HYUN JOONG-
dc.contributor.authorCho Won Il-
dc.contributor.authorCho Byung Won-
dc.contributor.authorKIM KWANG BUM-
dc.date.accessioned2024-01-13T12:33:33Z-
dc.date.available2024-01-13T12:33:33Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/106915-
dc.languageEnglish-
dc.subjectruthenium-
dc.titleEffect of doped ruthenium on the discharge capacity of vandium oxides-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationAsian Conference on Electrochemistry 2002 and The 5th Kore-Japan Joint Seminar on Electrochemistry, pp.568 - 569-
dc.citation.titleAsian Conference on Electrochemistry 2002 and The 5th Kore-Japan Joint Seminar on Electrochemistry-
dc.citation.startPage568-
dc.citation.endPage569-
dc.citation.conferencePlaceKO-
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