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dc.contributor.authorKANG. DONGHOON-
dc.contributor.author최훈상-
dc.contributor.author이관-
dc.contributor.authorKim Yong Tae-
dc.contributor.author이종한-
dc.contributor.author이건식-
dc.contributor.authorKim Seong Il-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T13:02:22Z-
dc.date.available2024-01-13T13:02:22Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107106-
dc.languageEnglish-
dc.subjectBi content-
dc.subjectSBN-
dc.subjectferroelectric gate-
dc.subjectleakage current-
dc.titleEffects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제9회 한국반도체학술대회, pp.605 - 606-
dc.citation.title제9회 한국반도체학술대회-
dc.citation.startPage605-
dc.citation.endPage606-
dc.citation.conferencePlaceKO-
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