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dc.contributor.authorKim Hun-
dc.contributor.authorJong-Won Park-
dc.contributor.author이주원-
dc.contributor.authorLEE YUN HI-
dc.contributor.author송윤호-
dc.contributor.authorJin-Ho Lee-
dc.contributor.author조경익-
dc.contributor.author장진-
dc.contributor.authorOH MYUNG HWAN-
dc.contributor.authorJu Byeong Kwon-
dc.date.accessioned2024-01-13T13:32:38Z-
dc.date.available2024-01-13T13:32:38Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107389-
dc.languageEnglish-
dc.subjectporous-polysilicon-
dc.subjectfield emission-
dc.subjectanodization-
dc.subjectturn-on voltage-
dc.titleElectron emission characteristics of the porous polycrystalline silicon diode-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 2nd International Display Manufacturing Conference., pp.273 - 275-
dc.citation.titleThe 2nd International Display Manufacturing Conference.-
dc.citation.startPage273-
dc.citation.endPage275-
dc.citation.conferencePlaceKO-
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