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dc.contributor.authorKim Yong Tae-
dc.contributor.author심선일-
dc.contributor.authorKim Seong Il-
dc.contributor.author최훈상-
dc.contributor.author최인훈-
dc.contributor.authorMakoto Ishida-
dc.date.accessioned2024-01-13T14:00:30Z-
dc.date.available2024-01-13T14:00:30Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107523-
dc.languageEnglish-
dc.subjectferroelectric gate-
dc.titleA new ferroelectric gate structure for low power operation of non volatile memory devices-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProceeding of International conference on Elctrical Engineering, v.3, pp.1816 - 1820-
dc.citation.titleProceeding of International conference on Elctrical Engineering-
dc.citation.volume3-
dc.citation.startPage1816-
dc.citation.endPage1820-
dc.citation.conferencePlaceCC-
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