DSpace at KIST: Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structure

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DC Field	Value	Language
dc.contributor.author	Sung-Kyun Lee	-
dc.contributor.author	Kim Yong Tae	-
dc.contributor.author	Kim Seong Il	-
dc.contributor.author	이철의	-
dc.date.accessioned	2024-01-13T14:00:53Z	-
dc.date.available	2024-01-13T14:00:53Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/107547	-
dc.language	English	-
dc.subject	ferroelectric gate	-
dc.title	Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structure	-
dc.type	Conference	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	Ferroelectric Materials Application, pp.209 - 210	-
dc.citation.title	Ferroelectric Materials Application	-
dc.citation.startPage	209	-
dc.citation.endPage	210	-
dc.citation.conferencePlace	JA	-

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