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dc.contributor.authorK. S. Shin-
dc.contributor.authorK. K. Paek-
dc.contributor.authorY. S. Lee-
dc.contributor.authorLEE YUN HI-
dc.contributor.authorS. I. Kim-
dc.contributor.authorJ. H. Park-
dc.contributor.authorJu Byeong Kwon-
dc.date.accessioned2024-01-13T14:03:32Z-
dc.date.available2024-01-13T14:03:32Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107721-
dc.languageEnglish-
dc.subjectMOSFET-
dc.titleThe characterization of the modified floating gate MOSFETs for photodetector-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationInternational Symposium on Robotics (ISR2001), pp.4 - 46-
dc.citation.titleInternational Symposium on Robotics (ISR2001)-
dc.citation.startPage4-
dc.citation.endPage46-
dc.citation.conferencePlaceKO-
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