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dc.contributor.author조광식-
dc.contributor.author윤석호-
dc.contributor.author황희돈-
dc.contributor.author윤의준-
dc.contributor.author박영민-
dc.contributor.authorPark Young Ju-
dc.contributor.authorKIM EUN KYU-
dc.contributor.authorLIM YOUNG SU-
dc.contributor.author이정용-
dc.date.accessioned2024-01-13T14:31:55Z-
dc.date.available2024-01-13T14:31:55Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/107880-
dc.languageEnglish-
dc.subjectSi-doping-
dc.subjectmolecular beam epitaxy-
dc.subjectquantum dots-
dc.subjectphotoluminescence-
dc.titleEffect of Si doping on InAs/GaAs quantum dots-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 8th Kor. Conf. on Semicon., pp.603 - 604-
dc.citation.titleThe 8th Kor. Conf. on Semicon.-
dc.citation.startPage603-
dc.citation.endPage604-
dc.citation.conferencePlaceKO-
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