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dc.contributor.author심광보-
dc.contributor.author노정현-
dc.contributor.authorPark Young Ju-
dc.contributor.authorKIM EUN KYU-
dc.date.accessioned2024-01-13T15:03:28Z-
dc.date.available2024-01-13T15:03:28Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108217-
dc.languageEnglish-
dc.subjectInAs-
dc.titleStructural characteristics of InAs QDs on GaAs(100) grown by the MBE technique-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe 1st Asian Conf. on Crystal Growth and Crystal Technology, pp.85-
dc.citation.titleThe 1st Asian Conf. on Crystal Growth and Crystal Technology-
dc.citation.startPage85-
dc.citation.endPage85-
dc.citation.conferencePlaceJA-
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