Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Yong Tae | - |
| dc.contributor.author | 최훈상 | - |
| dc.contributor.author | 박건상 | - |
| dc.contributor.author | 최인훈 | - |
| dc.date.accessioned | 2024-01-13T15:04:54Z | - |
| dc.date.available | 2024-01-13T15:04:54Z | - |
| dc.date.created | 2021-09-29 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/108303 | - |
| dc.language | English | - |
| dc.subject | SrBi2Ta2O9 | - |
| dc.title | Effects of voltage distribution in Pt/SrBi2Ta2O9/Ta2O5/Si structure on memory window of ferroelectric gate | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | 12th IEEE International Symposium on Applications of Ferroelectrics | - |
| dc.citation.title | 12th IEEE International Symposium on Applications of Ferroelectrics | - |
| dc.citation.conferencePlace | US | - |
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