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dc.contributor.author김동준-
dc.contributor.author심현상-
dc.contributor.authorKim Yong Tae-
dc.contributor.authorKIM CHUN KEUN-
dc.contributor.author박종완-
dc.date.accessioned2024-01-13T15:31:21Z-
dc.date.available2024-01-13T15:31:21Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108360-
dc.languageEnglish-
dc.subjectW-N diffusion barrier-
dc.titleEnhancement of the electical and physical properties of Cu/W-N/HSQ interconnection scheme by NH₃ plasma treatment-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationThe International Conference on Electrical Engineering 2000, pp.766 - 769-
dc.citation.titleThe International Conference on Electrical Engineering 2000-
dc.citation.startPage766-
dc.citation.endPage769-
dc.citation.conferencePlaceJA-
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