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dc.contributor.authorChoi Won Jun-
dc.contributor.author이희택-
dc.contributor.authorWoo Deok Ha-
dc.contributor.authorLee Seok-
dc.contributor.authorKim Sun Ho-
dc.contributor.authorCHOI SANG SAM-
dc.date.accessioned2024-01-13T16:00:51Z-
dc.date.available2024-01-13T16:00:51Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108610-
dc.languageEnglish-
dc.subjectquantum well intermixing-
dc.titleDependence of the intermixing of InGaAs/InGaAsP quantum well in impurity free vacancy disordering on the NH₃ flow rate for the growth of SiNx capping layer-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation2000 March Meeting Bulletin of the a Merican Physical Society, v.45, no.1, pp.807-
dc.citation.title2000 March Meeting Bulletin of the a Merican Physical Society-
dc.citation.volume45-
dc.citation.number1-
dc.citation.startPage807-
dc.citation.endPage807-
dc.citation.conferencePlaceUS-
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