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dc.contributor.author최훈상-
dc.contributor.authorKim Yong Tae-
dc.contributor.authorKim Seong Il-
dc.contributor.author최인훈-
dc.contributor.authorHoon Sang Choi-
dc.contributor.authorSeong Il Kim-
dc.contributor.authorIn-Hoon Choi-
dc.date.accessioned2024-01-13T16:02:31Z-
dc.date.available2024-01-13T16:02:31Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/108714-
dc.languageEnglish-
dc.subjectSrBi2Ta2O9-
dc.subjectferroelectric-
dc.subjectNDRO-FRAM-
dc.titleElectrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 10th Seoul International Symposium on the Physics of Semiconductors and Application-
dc.citation.titleThe 10th Seoul International Symposium on the Physics of Semiconductors and Application-
dc.citation.conferencePlaceKO-
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