DSpace at KIST: Single precursor MOCVD of aluminum nitride

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DC Field	Value	Language
dc.contributor.author	경제홍	-
dc.contributor.author	최승철	-
dc.contributor.author	CHO SEONG HOON	-
dc.contributor.author	HAN SUNG HAN	-
dc.date.accessioned	2024-01-13T16:33:17Z	-
dc.date.available	2024-01-13T16:33:17Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/109028	-
dc.language	English	-
dc.subject	MOCVD	-
dc.subject	AlN	-
dc.subject	Single precursor	-
dc.subject	RBS	-
dc.subject	AES	-
dc.title	Single precursor MOCVD of aluminum nitride	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Proceedings of Inorganic Chemistry Symposium, v.VI, pp.85 - 86	-
dc.citation.title	Proceedings of Inorganic Chemistry Symposium	-
dc.citation.volume	VI	-
dc.citation.startPage	85	-
dc.citation.endPage	86	-
dc.citation.conferencePlace	KO	-

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