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dc.contributor.author정석구-
dc.contributor.authorMIN BYUNG DON-
dc.contributor.authorKIM YOUN-
dc.contributor.authorKIM EUN KYU-
dc.contributor.author현찬경-
dc.contributor.author황성우-
dc.contributor.authorPARK JEONG HO-
dc.date.accessioned2024-01-13T17:03:46Z-
dc.date.available2024-01-13T17:03:46Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109324-
dc.languageEnglish-
dc.subjectself-assembled QDs-
dc.titleLateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAbstracts of MRS 1999 Spring Meeting, pp.362-
dc.citation.titleAbstracts of MRS 1999 Spring Meeting-
dc.citation.startPage362-
dc.citation.endPage362-
dc.citation.conferencePlaceUS-
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