DSpace at KIST: Stress effect on interconnect reliability due to electromigration

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DC Field	Value	Language
dc.contributor.author	PARK YOUNG JOON	-
dc.contributor.author	주영창	-
dc.date.accessioned	2024-01-13T17:33:16Z	-
dc.date.available	2024-01-13T17:33:16Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/109562	-
dc.language	English	-
dc.subject	electromigration	-
dc.title	Stress effect on interconnect reliability due to electromigration	-
dc.title.alternative	반도체 배선의 electromigration 신뢰성에 미치는 stress의 영향	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Proc. of the Thirteenth Conference on Mechanical Behaviors of Materials, pp.83 - 92	-
dc.citation.title	Proc. of the Thirteenth Conference on Mechanical Behaviors of Materials	-
dc.citation.startPage	83	-
dc.citation.endPage	92	-
dc.citation.conferencePlace	KO	-

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