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dc.contributor.author이정욱-
dc.contributor.author백호선-
dc.contributor.author이재인-
dc.contributor.author유지범-
dc.contributor.authorKum Dong Wha-
dc.date.accessioned2024-01-13T18:30:26Z-
dc.date.available2024-01-13T18:30:26Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109919-
dc.languageEnglish-
dc.subjectThick GaN-
dc.titleThe effect of two step GaN growth on the properties of thick GaN by hydride vapor phase epitaxy-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998, pp.129 - 132-
dc.citation.titleProc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998-
dc.citation.startPage129-
dc.citation.endPage132-
dc.citation.conferencePlaceJA-
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