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dc.contributor.authorByun Dongjin-
dc.contributor.author김현정-
dc.contributor.author김주성-
dc.contributor.authorKOH SEOK KEUN-
dc.contributor.authorCHOI WON-KOOK-
dc.contributor.authorPark Dal keun-
dc.contributor.authorKum Dong Wha-
dc.date.accessioned2024-01-13T18:30:33Z-
dc.date.available2024-01-13T18:30:33Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109926-
dc.languageEnglish-
dc.subjectGaN-growth-
dc.titleSapphire surface modified by reactive ion beam-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998, pp.97 - 100-
dc.citation.titleProc. 2nd Intern. Symp. on blue laser and light emitting diodes, Chiba, Japan, Sept. 29-Oct. 2, 1998-
dc.citation.startPage97-
dc.citation.endPage100-
dc.citation.conferencePlaceJA-
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