Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ho Nyung Lee | - |
| dc.contributor.author | Kim Yong Tae | - |
| dc.date.accessioned | 2024-01-13T18:31:31Z | - |
| dc.date.available | 2024-01-13T18:31:31Z | - |
| dc.date.created | 2021-09-29 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/109989 | - |
| dc.language | English | - |
| dc.subject | Ferroelectrics | - |
| dc.title | Enhancement of memory window in the metal/ferroelectric/insulator/semiconductor field effect transistor | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | '98 International symposium on Application of Ferroelectric, pp.? | - |
| dc.citation.title | '98 International symposium on Application of Ferroelectric | - |
| dc.citation.startPage | ? | - |
| dc.citation.endPage | ? | - |
| dc.citation.conferencePlace | SZ | - |
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