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dc.contributor.authorKim Yong Tae-
dc.contributor.author이창우-
dc.contributor.author신동석-
dc.contributor.authorHo Nyung Lee-
dc.date.accessioned2024-01-13T18:31:32Z-
dc.date.available2024-01-13T18:31:32Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/109991-
dc.languageEnglish-
dc.subjectFerroelectrics-
dc.titleEffect of insulator on memory window of metal ferroelectric insulator semiconductor field effect transistor (MEFISFET)-non destructive devices-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation'98 International symposium on Application of Ferroelectric, pp.?-
dc.citation.title'98 International symposium on Application of Ferroelectric-
dc.citation.startPage?-
dc.citation.endPage?-
dc.citation.conferencePlaceSZ-
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