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dc.contributor.authorKim Seong Il-
dc.contributor.authorH.H. Tan-
dc.contributor.authorC. Jagadish-
dc.contributor.authorL.V. Dao-
dc.contributor.authorM. Gal-
dc.date.accessioned2024-01-13T19:01:58Z-
dc.date.available2024-01-13T19:01:58Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110280-
dc.languageEnglish-
dc.subjectdelta-doped-
dc.subjectquantum wire-
dc.subjectMOCVD-
dc.titleFabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationConference on Optoelectronic and Microelectronic Materials And Devices (COMMAD'98), pp.145 - 146-
dc.citation.titleConference on Optoelectronic and Microelectronic Materials And Devices (COMMAD'98)-
dc.citation.startPage145-
dc.citation.endPage146-
dc.citation.conferencePlaceKO-
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