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dc.contributor.authorJewon Kim-
dc.contributor.authorSON CHANG-SIK-
dc.contributor.author최인훈-
dc.contributor.authorPARK YOUNG KYUN-
dc.contributor.authorKim Yong Tae-
dc.date.accessioned2024-01-13T19:02:20Z-
dc.date.available2024-01-13T19:02:20Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110303-
dc.languageEnglish-
dc.subjectAlGaN-
dc.titleOptical properties of AlxGa1-xN grown by plasma induced molecular beam epitaxy-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationAbstracts of the 9th Seoul International Symposium on the Physics of Semiconductors and Applications, pp.95-
dc.citation.titleAbstracts of the 9th Seoul International Symposium on the Physics of Semiconductors and Applications-
dc.citation.startPage95-
dc.citation.endPage95-
dc.citation.conferencePlaceKO-
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