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Comparison of different substrate pre-treatment for GaN growth by MOCVD

Authors

김현정; Byun Dongjin; Park Dal keun; Kum Dong Wha

Citation

Abst. the 9th Seoul international symposium on the physics of semiconductors and applications (ISPSA, pp.105

Keywords

MOCVD

URI

https://pubs.kist.re.kr/handle/201004/110335

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KIST Conference Paper > Others

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