DSpace at KIST: The effect of low temperature GaN-buffer layer on the growth of thick GaN using HVPE

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DC Field	Value	Language
dc.contributor.author	이정욱	-
dc.contributor.author	백호선	-
dc.contributor.author	유지범	-
dc.contributor.author	Kim Gyeung Ho	-
dc.contributor.author	Kum Dong Wha	-
dc.date.accessioned	2024-01-13T19:04:05Z	-
dc.date.available	2024-01-13T19:04:05Z	-
dc.date.created	2021-09-29	-
dc.identifier.issn	1225-1550	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/110411	-
dc.language	English	-
dc.subject	Hydride Vapor Phase Epitaxy(HVPE)	-
dc.subject	GaN-buffer	-
dc.subject	thick GaN film	-
dc.subject	cross sectional TEM	-
dc.title	The effect of low temperature GaN-buffer layer on the growth of thick GaN using HVPE	-
dc.title.alternative	Hydride vapor phase epitaxy를 이용한 저온 GaN 완충층이 후막 GaN 성장특성에 미치는 영향	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	대한금속학회회보 = Bull. Kor. Inst. Met. & Mater., v.11, no.5, pp.499 - 504	-
dc.citation.title	대한금속학회회보 = Bull. Kor. Inst. Met. & Mater.	-
dc.citation.volume	11	-
dc.citation.number	5	-
dc.citation.startPage	499	-
dc.citation.endPage	504	-
dc.citation.conferencePlace	KO	-

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