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dc.contributor.authorPark Young Ju-
dc.contributor.author한철구-
dc.contributor.author김광무-
dc.contributor.author정석구-
dc.contributor.authorKIM EUN KYU-
dc.contributor.authorMin Suk-Ki-
dc.date.accessioned2024-01-13T19:31:10Z-
dc.date.available2024-01-13T19:31:10Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110501-
dc.languageEnglish-
dc.subjectSelective area growth-
dc.titleSelective formation of In//xGa//1//-//xAs quantum dots by molecular beam epitaxy-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPhotodetectors: Materials and Devices III, 28-30 January 1998 San Jose, California (Proceedings of S, v.3287, pp.305 - 312-
dc.citation.titlePhotodetectors: Materials and Devices III, 28-30 January 1998 San Jose, California (Proceedings of S-
dc.citation.volume3287-
dc.citation.startPage305-
dc.citation.endPage312-
dc.citation.conferencePlaceUS-
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