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dc.contributor.author엄창섭-
dc.contributor.authorKPARK KYUNG HYUN-
dc.contributor.authorByun Young Tae-
dc.contributor.authorHan Il Ki-
dc.contributor.authorWoo Deok Ha-
dc.contributor.authorKim Sun Ho-
dc.contributor.authorLee Jung Il-
dc.contributor.authorPARK JEONG HO-
dc.date.accessioned2024-01-13T19:33:44Z-
dc.date.available2024-01-13T19:33:44Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110667-
dc.languageEnglish-
dc.subjectCBE-
dc.subject반도체 레이저 다이오드-
dc.titleTemperature characteristics of InGaAs/InGaAsP MQW laser diode grown by chemical beam epitaxy-
dc.title.alternativeCBE법으로 성장한 InGaAs/InGaAsP MQW 레이저 다이오드의 온도 특성-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation제14회 광학 및 양자전자 학술발표회, pp.67-
dc.citation.title제14회 광학 및 양자전자 학술발표회-
dc.citation.startPage67-
dc.citation.endPage67-
dc.citation.conferencePlaceKO-
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