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dc.contributor.authorCho Shinho-
dc.contributor.authorSON CHANG-SIK-
dc.contributor.author이달진-
dc.contributor.authorKim Seong Il-
dc.contributor.authorKIM YOUN-
dc.contributor.authorKIM EUN KYU-
dc.contributor.authorMin Suk-Ki-
dc.date.accessioned2024-01-13T20:03:54Z-
dc.date.available2024-01-13T20:03:54Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/110929-
dc.languageEnglish-
dc.subjecttemperature dependence-
dc.subjectphotoluminescence peak-
dc.subjectcarbon-doped GaAs-
dc.subjectMOCVD-
dc.subjecthigh miller index-
dc.titleTemperature dependence of photoluminescence peak from carbon-doped GaAs epilayers grown on high miller index GaAs substrates-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationProc. 4th Korean conf. semiconductors., pp.65 - 66-
dc.citation.titleProc. 4th Korean conf. semiconductors.-
dc.citation.startPage65-
dc.citation.endPage66-
dc.citation.conferencePlaceKO-
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