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dc.contributor.authorSON CHANG-SIK-
dc.contributor.authorKim Seong Il-
dc.contributor.authorMIN BYUNG DON-
dc.contributor.author황성민-
dc.contributor.authorKIM EUN KYU-
dc.contributor.authorMin Suk-Ki-
dc.contributor.author최인훈-
dc.date.accessioned2024-01-13T21:32:23Z-
dc.date.available2024-01-13T21:32:23Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111645-
dc.languageEnglish-
dc.subjectcarbon-
dc.titleHeavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationBulletin of the Korean physical society, v.v. 14, no.no. 1, pp.239 - ?-
dc.citation.titleBulletin of the Korean physical society-
dc.citation.volumev. 14-
dc.citation.numberno. 1-
dc.citation.startPage239-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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