DSpace at KIST: Electrical characteristics of silicon oxide films prepared by chemical vapor deposition method using ECR plama sources.

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DC Field	Value	Language
dc.contributor.author	JEON BUP JU	-
dc.contributor.author	허정수	-
dc.contributor.author	윤용수	-
dc.contributor.author	정일현	-
dc.contributor.author	Oh In Hwan	-
dc.contributor.author	Lim Tae Hoon	-
dc.date.accessioned	2024-01-13T21:32:41Z	-
dc.date.available	2024-01-13T21:32:41Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/111663	-
dc.language	English	-
dc.title	Electrical characteristics of silicon oxide films prepared by chemical vapor deposition method using ECR plama sources.	-
dc.title.alternative	ECR 플라즈마를 이용한 화학증착법에 의해 제조된 실리콘 산화막의 전기적 특성 =	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Theories and applications of chem. res., v.v. 2, no.no. 2, pp.2523 - ?	-
dc.citation.title	Theories and applications of chem. res.	-
dc.citation.volume	v. 2	-
dc.citation.number	no. 2	-
dc.citation.startPage	2523	-
dc.citation.endPage	?	-
dc.citation.conferencePlace	KO	-

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