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dc.contributor.authorSON CHANG-SIK-
dc.contributor.author황성민-
dc.contributor.authorKim Seong Il-
dc.contributor.author황성민-
dc.contributor.authorKIM MOO SUNG-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorKIM EUN KYU-
dc.contributor.authorKIM YOUN-
dc.date.accessioned2024-01-13T21:32:47Z-
dc.date.available2024-01-13T21:32:47Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111669-
dc.languageEnglish-
dc.subjectlateral growth-
dc.titleEnhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationProceedings of the microprocess '96, pp.166 - 169-
dc.citation.titleProceedings of the microprocess '96-
dc.citation.startPage166-
dc.citation.endPage169-
dc.citation.conferencePlaceJA-
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