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Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4.

Authors

SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈

Citation

Proceedings of the miroprocess '96., pp.174 - 175

Keywords

MOCVD

URI

https://pubs.kist.re.kr/handle/201004/111670

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KIST Conference Paper > Others

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