Effect of sapphire nitridation on GaN by MOCVD.

Authors
Kum Dong WhaByun DongjinKim Gyeung Ho정재식KIM BYUNG HOPark Dal keun
Citation
The 8th Seoul international symposium on the physics of semiconductors and applications, pp.?
Keywords
GaN
URI
https://pubs.kist.re.kr/handle/201004/111674
Appears in Collections:
KIST Conference Paper > Others
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