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dc.contributor.authorByun Dongjin-
dc.contributor.author정재식-
dc.contributor.authorKum Dong Wha-
dc.contributor.authorKim Gyeung Ho-
dc.contributor.author이재인-
dc.contributor.authorPark Dal keun-
dc.contributor.authorKIM BYUNG HO-
dc.contributor.author유지범-
dc.date.accessioned2024-01-13T21:32:54Z-
dc.date.available2024-01-13T21:32:54Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111675-
dc.languageEnglish-
dc.subjectGaN-
dc.titleEffect of sapphire nitridation on GaN by MOCVD-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMaterials research society, pp.?-
dc.citation.titleMaterials research society-
dc.citation.startPage?-
dc.citation.endPage?-
dc.citation.conferencePlaceUS-
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KIST Conference Paper > Others
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