Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강문상 | - |
| dc.contributor.author | Lim Tae Hoon | - |
| dc.contributor.author | Oh In Hwan | - |
| dc.contributor.author | JEON BUP JU | - |
| dc.date.accessioned | 2024-01-13T21:33:20Z | - |
| dc.date.available | 2024-01-13T21:33:20Z | - |
| dc.date.created | 2021-09-29 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/111701 | - |
| dc.language | English | - |
| dc.title | Characteristics of a-Si:H films prepared by ECRPVD | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | International electron device and materials symposia E1-3, Hsinchu, Taiwan, pp.225 | - |
| dc.citation.title | International electron device and materials symposia E1-3, Hsinchu, Taiwan | - |
| dc.citation.startPage | 225 | - |
| dc.citation.conferencePlace | CH | - |
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