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dc.contributor.authorSON CHANG-SIK-
dc.contributor.authorMIN BYUNG DON-
dc.contributor.author박만장-
dc.contributor.author황성민-
dc.contributor.authorKim Seong Il-
dc.contributor.authorKIM MOO SUNG-
dc.contributor.authorMin Suk-Ki-
dc.date.accessioned2024-01-13T21:33:22Z-
dc.date.available2024-01-13T21:33:22Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111703-
dc.languageEnglish-
dc.subjectcarbon-
dc.titleCarbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationProceedings of the 3rd Korean conference on semiconductors, pp.77 - 78-
dc.citation.titleProceedings of the 3rd Korean conference on semiconductors-
dc.citation.startPage77-
dc.citation.endPage78-
dc.citation.conferencePlaceKO-
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