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dc.contributor.authorKim Seong Il-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorKIM YOUN-
dc.contributor.authorKIM MOO SUNG-
dc.contributor.authorKANG JOON MO-
dc.contributor.author황성민-
dc.contributor.author박양근-
dc.date.accessioned2024-01-13T22:03:25Z-
dc.date.available2024-01-13T22:03:25Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/111963-
dc.languageEnglish-
dc.subjectMOCVD-
dc.titleLateral growth rate control of GaAs and AlGaAs by CCl//4 during MOCVD on patterned substrates.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 2nd Korean semiconductor conference, pp.393 - 394-
dc.citation.titleThe 2nd Korean semiconductor conference-
dc.citation.startPage393-
dc.citation.endPage394-
dc.citation.conferencePlaceKO-
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