DSpace at KIST: Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4.

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DC Field	Value	Language
dc.contributor.author	Kim Seong Il	-
dc.contributor.author	KIM MOO SUNG	-
dc.contributor.author	Min Suk-Ki	-
dc.contributor.author	KIM YOUN	-
dc.date.accessioned	2024-01-13T22:03:58Z	-
dc.date.available	2024-01-13T22:03:58Z	-
dc.date.created	2021-09-29	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/111998	-
dc.language	English	-
dc.subject	MOCVD	-
dc.title	Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4.	-
dc.type	Conference	-
dc.description.journalClass	2	-
dc.identifier.bibliographicCitation	Japan-Korea joint seminar on photovoltaics, pp.173 - 178	-
dc.citation.title	Japan-Korea joint seminar on photovoltaics	-
dc.citation.startPage	173	-
dc.citation.endPage	178	-
dc.citation.conferencePlace	KO	-

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