Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim Seong Il | - |
| dc.contributor.author | Min Suk-Ki | - |
| dc.contributor.author | MIN BYUNG DON | - |
| dc.contributor.author | KIM MOO SUNG | - |
| dc.contributor.author | S. K. Park | - |
| dc.contributor.author | C. Lee | - |
| dc.date.accessioned | 2024-01-13T22:04:02Z | - |
| dc.date.available | 2024-01-13T22:04:02Z | - |
| dc.date.created | 2021-09-29 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/112002 | - |
| dc.language | English | - |
| dc.subject | MOCVD | - |
| dc.title | Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer. | - |
| dc.type | Conference | - |
| dc.description.journalClass | 2 | - |
| dc.identifier.bibliographicCitation | The 3rd Korean semiconductor conference, pp.? | - |
| dc.citation.title | The 3rd Korean semiconductor conference | - |
| dc.citation.startPage | ? | - |
| dc.citation.endPage | ? | - |
| dc.citation.conferencePlace | KO | - |
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