Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KANG KWANG NHAM | - |
| dc.contributor.author | W. J. Choi | - |
| dc.contributor.author | S. Lee | - |
| dc.contributor.author | Y. Kim | - |
| dc.contributor.author | Lee Jung Il | - |
| dc.contributor.author | S. K. Kim | - |
| dc.date.accessioned | 2024-01-13T22:04:38Z | - |
| dc.date.available | 2024-01-13T22:04:38Z | - |
| dc.date.created | 2021-09-29 | - |
| dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/112038 | - |
| dc.language | English | - |
| dc.subject | quantum well disordering | - |
| dc.title | Quantum well disordering by using plasma enhanced chemical vapor deposited SiN//x film as a capping layer. | - |
| dc.type | Conference | - |
| dc.description.journalClass | 1 | - |
| dc.identifier.bibliographicCitation | Ist Korea-Chinese semiconductor conference, Beijing, China, pp.? | - |
| dc.citation.title | Ist Korea-Chinese semiconductor conference, Beijing, China | - |
| dc.citation.startPage | ? | - |
| dc.citation.endPage | ? | - |
| dc.citation.conferencePlace | CC | - |
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