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dc.contributor.authorKim Seong Il-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorKIM YOUN-
dc.contributor.authorKIM MOO SUNG-
dc.date.accessioned2024-01-13T22:31:49Z-
dc.date.available2024-01-13T22:31:49Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112140-
dc.languageEnglish-
dc.subjectMOCVD-
dc.subjectGaAs-
dc.subjectAlGaAs-
dc.subjectPL-
dc.titleThe electrical and optical characteristics of carbon doped GaAs epilayers grown by MOCVD.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationThe 1st Korean semiconductor conference, pp.?-
dc.citation.titleThe 1st Korean semiconductor conference-
dc.citation.startPage?-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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KIST Conference Paper > Others
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