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dc.contributor.authorKIM EUN KYU-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorS. W. Lee-
dc.contributor.authorH. Y. Cho-
dc.contributor.authorH. S. Kim-
dc.contributor.authorJ. H. Park-
dc.date.accessioned2024-01-13T23:01:32Z-
dc.date.available2024-01-13T23:01:32Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112386-
dc.languageEnglish-
dc.subjectGaAs layer-
dc.subjectmolecular beam epitaxy-
dc.subjectcharacterization-
dc.titleGrowth and characterization of GaAs layer by molecular beam epitaxy.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationProc. KITE summer conf. '92, v.v. 15, no.no. 1, pp.329 - 332-
dc.citation.titleProc. KITE summer conf. '92-
dc.citation.volumev. 15-
dc.citation.numberno. 1-
dc.citation.startPage329-
dc.citation.endPage332-
dc.citation.conferencePlaceKO-
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